Two-Dimensional MoSi<sub>2</sub>N<sub>4</sub>: An Excellent 2-D Semiconductor for Field-Effect Transistors
نویسندگان
چکیده
We report the performance of field-effect transistors (FETs), comprised mono-layer recently synthesized layered two-dimensional MoSi2N_4 as channel material, using first principles quantum transport simulations. The devices' is assessed per International Roadmap for Devices and Systems (IRDS) 2020 roadmap year 2034 compared to advanced silicon-based FETs, carbon nanotube-based other promising materials based FETs. Finally, we estimate figure merits a combinational sequential logic circuit on our double gate devices benchmark against alternative technologies. circuits them are encouraging, competitive alternatives.
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2022
ISSN: ['0018-9383', '1557-9646']
DOI: https://doi.org/10.1109/ted.2021.3130834